Terrestrial Neutron-induced Soft Errors in Advanced Memory Devices

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features. Sample Chapter(s). Chapter 1: Introduction (238 KB). Table A.30 mentioned in Appendix A.6 on page 289 (334 KB). Contents: Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Testing in the Terrestrial Field; Neutron Irradiation Test Facilities; Review and Discussion of Experimental Data; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of the Neutron Test Method; Summary and Challenges. Readership: Students and researchers in the field of radiation effects/nuclear and accelerator physics/cosmic ray physics, engineers involved in reliability design/quality assurance of semiconductor devices and IT systems.